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| Semiconductor SUF621EF N-Channel Enhancement-Mode MOSFET Description * High speed switching application. * Analog switch application. Features * 2.5V Gate drive. * Low threshold voltage : Vth = 0.5~1.5V. * Two STK1828 Chips in SOT-563F Package. Ordering Information Type NO. SUF621EF Marking H Package Code SOT-563F Outline Dimensions unit : mm 3 2 1 Q2 Q1 4 5 6 PIN Connections 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain1 KST-J017-000 1 SUF621EF Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range (Q1,Q2 Common) (Ta=25C) Symbol VDS VGSS ID PD Tch Tstg Ratings 20 10 50 100 150 -55~150 Unit V V mA mW C C Electrical Characteristics Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time (Q1,Q2 Common) (Ta=25C) Symbol BVDSS Vth IDSS IGSS RDS(ON) Yfs Ciss Coss Crss ton toff Test Condition ID=100A, VGS=0 ID=0.1mA, VDS=3V VDS=20V, VGS=0 VGS=10V, VDS=0 VGS=2.5V, ID=10mA VDS=3V, ID=10mA VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10mA VGEN=0~2.5V Min. Typ. Max. 20 0.5 1.5 1 1 20 20 5.5 6.5 1.6 0.14 0.14 40 Unit V V A A mS pF pF pF * Switching Time Test Circuit = KST-J017-000 2 SUF621EF Electrical Characteristic Curves Fig.1 ID - VDS Fig.2 PD - Ta Fig.3 IDR - VDS Fig.4 ID - VGS 155 - Fig.5 Yfs- ID Fig.6 C - VDS orward transfer admittance KST-J017-000 3 Electrical Characteristic Curves Fig.7 VDS - ID Fig.8 t - ID SUF621EF KST-J017-000 4 |
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